Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates

Model of interface states at III-V oxide interfaces

(2009) John Robertson   APPLIED PHYSICS LETTERS

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

(2009) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Reduction of native oxides on GaAs during atomic layer growth of Al2O3

(2009) Hang Dong Lee et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition of HfO2onto Si Using Hf(NMe2)4

(2009) Jeong Chan Kim et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Interface of atomic layer deposited HfO2 films on GaAs (100) surfaces

(2008) Justin C. Hackley et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

Capacitance-voltage characterization of GaAs–Al2O3 interfaces

(2008) G. Brammertz et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS