Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

Published 2009 View Full Article

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Title
Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator
Authors
Keywords
-
Journal
MICROELECTRONIC ENGINEERING
Volume 86, Issue 7-9, Pages 1554-1557
Publisher
Elsevier BV
Online
2009-03-25
DOI
10.1016/j.mee.2009.03.112

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