Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs,In0.15Ga0.85As) substrates

Model of interface states at III-V oxide interfaces

(2009) John Robertson   APPLIED PHYSICS LETTERS

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

(2009) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Atomic layer deposition of LaxZr1−xO2−δ (x=0.25) high-k dielectrics for advanced gate stacks

(2009) D. Tsoutsou et al.   APPLIED PHYSICS LETTERS

Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators

(2008) Byungha Shin et al.   APPLIED PHYSICS LETTERS

Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates

(2008) D. Shahrjerdi et al.   APPLIED PHYSICS LETTERS

Structure and interface bonding of GeO2∕Ge∕In0.15Ga0.85As heterostructures

(2008) Alessandro Molle et al.   APPLIED PHYSICS LETTERS

Thermal stability of electrical and structural properties of GaAs-based metal-oxide-semiconductor capacitors with an amorphous LaAlO3 gate oxide

(2008) S. Koveshnikov et al.   APPLIED PHYSICS LETTERS

Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As

(2008) M. Kobayashi et al.   APPLIED PHYSICS LETTERS

The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

(2008) Dominik Fischer et al.   APPLIED PHYSICS LETTERS

Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

(2008) Duygu Kuzum et al.   IEEE ELECTRON DEVICE LETTERS

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

(2008) Shinichi Takagi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Capacitance–Voltage Characterization of GaAs–Oxide Interfaces

(2008) G. Brammertz et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)

(2008) Peide D. Ye   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Adsorption of molecular oxygen on the reconstructed β2(2×4)-GaAs(001) surface: A first-principles study

(2008) M. Scarrozza et al.   SURFACE SCIENCE