Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device

Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)

(2017) Ilia Valov   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

A memristor crossbar array of titanium oxide for non-volatile memory and neuromorphic applications

(2017) Haider Abbas et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Reliable Memristive Switching Memory Devices Enabled by Densely Packed Silver Nanocone Arrays as Electric-Field Concentrators

(2016) Byoung Kuk You et al.   ACS Nano

Engineering incremental resistive switching in TaOxbased memristors for brain-inspired computing

(2016) Zongwei Wang et al.   Nanoscale

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

(2016) Zhongrui Wang et al.   NATURE MATERIALS

Carbon Nanotube Synaptic Transistor Network for Pattern Recognition

(2015) Sungho Kim et al.   ACS Applied Materials & Interfaces

Filamentary Switching: Synaptic Plasticity through Device Volatility

(2015) Selina La Barbera et al.   ACS Nano

Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOxBased Memristive Devices

(2015) Michael Lübben et al.   ADVANCED MATERIALS

Utilizing multiple state variables to improve the dynamic range of analog switching in a memristor

(2015) YeonJoo Jeong et al.   APPLIED PHYSICS LETTERS

Investigation of Switching Phenomenon in Metal-Tantalum Oxide Interface

(2015) Abbas Yawar et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Training and operation of an integrated neuromorphic network based on metal-oxide memristors

(2015) M. Prezioso et al.   NATURE

Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

(2015) Anja Wedig et al.   Nature Nanotechnology

Conductive filament structure in HfO2 resistive switching memory devices

(2015) S. Privitera et al.   SOLID-STATE ELECTRONICS

Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping

(2014) Sungho Kim et al.   ACS Nano

Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

(2014) Sungho Kim et al.   ACS Nano

Towards forming-free resistive switching in oxygen engineered HfO2−x

(2014) S. U. Sharath et al.   APPLIED PHYSICS LETTERS

A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

(2013) Shimeng Yu et al.   ADVANCED MATERIALS

Forming-free resistive switching characteristics of 15 nm-thick multicomponent oxide

(2013) Berhanu Tulu et al.   APPLIED PHYSICS LETTERS

Nanoscale resistive switching devices: mechanisms and modeling

(2013) Yuchao Yang et al.   Nanoscale

On-Demand Nanodevice with Electrical and Neuromorphic Multifunction Realized by Local Ion Migration

(2012) Rui Yang et al.   ACS Nano

Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor

(2012) Zhong Qiang Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

(2012) Xiaojian Zhu et al.   ADVANCED MATERIALS

Interface mediated resistive switching in epitaxial NiO nanostructures

(2012) Jivika Sullaphen et al.   APPLIED PHYSICS LETTERS

Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor

(2011) Ting Chang et al.   ACS Nano

Synaptic behaviors and modeling of a metal oxide memristive device

(2011) Ting Chang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Understanding electroforming in bipolar resistive switching oxides

(2011) F. Gomez-Marlasca et al.   APPLIED PHYSICS LETTERS

Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature

(2011) Tung-Ming Pan et al.   APPLIED PHYSICS LETTERS

Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching

(2011) Chang Bum Lee et al.   IEEE ELECTRON DEVICE LETTERS

Formation of transition layers at metal/perovskite oxide interfaces showing resistive switching behaviors

(2011) T. Yamamoto et al.   JOURNAL OF APPLIED PHYSICS

Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

(2011) Duygu Kuzum et al.   NANO LETTERS

Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

(2011) Kyungah Seo et al.   NANOTECHNOLOGY

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

(2011) Takeo Ohno et al.   NATURE MATERIALS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories

(2010) Laurent Cario et al.   ADVANCED MATERIALS

Learning Abilities Achieved by a Single Solid-State Atomic Switch

(2010) Tsuyoshi Hasegawa et al.   ADVANCED MATERIALS

Multilevel resistive switching in Ti/CuxO/Pt memory devices

(2010) Sheng-Yu Wang et al.   JOURNAL OF APPLIED PHYSICS

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

(2010) Sung Hyun Jo et al.   NANO LETTERS

Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures

(2010) Kyung Min Kim et al.   NANOTECHNOLOGY

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

High-Density Crossbar Arrays Based on a Si Memristive System

(2009) Sung Hyun Jo et al.   NANO LETTERS

Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere

(2008) Doo Seok Jeong et al.   JOURNAL OF APPLIED PHYSICS

CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory

(2008) Sung Hyun Jo et al.   NANO LETTERS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Large-scale model of mammalian thalamocortical systems

(2008) E. M. Izhikevich et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA