Forming-free resistive switching characteristics of 15 nm-thick multicomponent oxide

Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristics

(2013) Dai-Ying Lee et al.   APPLIED PHYSICS LETTERS

Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode

(2013) Kuan-Liang Lin et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy

(2013) Yuanmin Du et al.   AIP Advances

Mechanical and thermal behaviors of nitrogen-doped Zr-Cu-Al-Ag-Ta––An alternative class of thin film metallic glass

(2012) Pao-Sheng Chen et al.   APPLIED PHYSICS LETTERS

Resistive switching behavior of a thin amorphous rare-earth scandate: Effects of oxygen content

(2012) W. Z. Chang et al.   APPLIED PHYSICS LETTERS

Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure

(2012) C. Chen et al.   APPLIED PHYSICS LETTERS

Resistive switching characteristics of solution-deposited Gd, Dy, and Ce-doped ZrO2 films

(2012) Myung Soo Lee et al.   APPLIED PHYSICS LETTERS

Magnetron Sputtered Ni-rich Nickel Oxide Nano-Films for Resistive Switching Memory Applications

(2012) Zhen Liu et al.   International Journal of Applied Ceramic Technology

Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanism

(2012) Ming-Chi Wu et al.   JOURNAL OF APPLIED PHYSICS

Hardness, yield strength, and plastic flow in thin film metallic-glass

(2012) J. C. Ye et al.   JOURNAL OF APPLIED PHYSICS

Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise

(2012) Yuan Heng Tseng et al.   JOURNAL OF APPLIED PHYSICS

CAFM investigations of filamentary conduction in Cu2O ReRAM devices fabricated using stencil lithography technique

(2012) Bharti Singh et al.   NANOTECHNOLOGY

Resistive-switching behavior and mechanism in copper-nitride thin films prepared by DC magnetron sputtering

(2012) Wei Zhu et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Thin film metallic glasses: Unique properties and potential applications

(2012) Jinn P. Chu et al.   THIN SOLID FILMS

Unipolar resistive switching mechanism speculated from irreversible low resistance state of Cu2O films

(2011) Sahwan Hong et al.   APPLIED PHYSICS LETTERS

A ZnO cross-bar array resistive random access memory stacked with heterostructure diodes for eliminating the sneak current effect

(2011) Jung Won Seo et al.   APPLIED PHYSICS LETTERS

Pt/Ti/Al2O3/Al tunnel junctions exhibiting electroforming-free bipolar resistive switching behavior

(2011) Doo Seok Jeong et al.   SOLID-STATE ELECTRONICS

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

(2010) L. Goux et al.   APPLIED PHYSICS LETTERS

Reduction in high reset currents in unipolar resistance switching Pt/SrTiOx/Pt capacitors using acceptor doping

(2010) S. B. Lee et al.   APPLIED PHYSICS LETTERS

Ionic doping effect in ZrO2 resistive switching memory

(2010) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM

(2010) Shimeng Yu et al.   IEEE ELECTRON DEVICE LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Observation of bistable resistance memory switching in CuO thin films

(2009) C. H. Kim et al.   APPLIED PHYSICS LETTERS

The influence of copper top electrodes on the resistive switching effect in TiO2 thin films studied by conductive atomic force microscopy

(2009) Lin Yang et al.   APPLIED PHYSICS LETTERS

Nonvolatile resistive switching in spinel ZnMn2O4 and ilmenite ZnMnO3

(2009) Haiyang Peng et al.   APPLIED PHYSICS LETTERS

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

(2009) H.Y. Lee et al.   IEEE ELECTRON DEVICE LETTERS

Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices

(2009) B. Sun et al.   JOURNAL OF APPLIED PHYSICS

Micro-scratch study of a magnetron-sputtered Zr-based metallic-glass film

(2009) F.X. Liu et al.   SURFACE & COATINGS TECHNOLOGY

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

(2008) Myoung-Jae Lee et al.   ADVANCED FUNCTIONAL MATERIALS

Resistive switching behavior of Pt/Mg0.2Zn0.8O/Pt devices for nonvolatile memory applications

(2008) Xinman Chen et al.   APPLIED PHYSICS LETTERS

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

(2008) Nuo Xu et al.   APPLIED PHYSICS LETTERS

Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$

(2008) Weihua Guan et al.   IEEE ELECTRON DEVICE LETTERS

Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory

(2008) M. J. Lee et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices

(2008) Chih-Yang Lin et al.   SURFACE & COATINGS TECHNOLOGY