Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature

Electrode dependence of filament formation in HfO2 resistive-switching memory

(2011) Kuan-Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Model of metallic filament formation and rupture in NiO for unipolar switching

(2010) Hyung Dong Lee et al.   PHYSICAL REVIEW B

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications

(2009) Yingtao Li et al.   IEEE ELECTRON DEVICE LETTERS

Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications

(2009) Xun Cao et al.   JOURNAL OF APPLIED PHYSICS

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

(2009) Myoung-Jae Lee et al.   NANO LETTERS

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

(2008) Nuo Xu et al.   APPLIED PHYSICS LETTERS

A chemically driven insulator–metal transition in non-stoichiometric and amorphous gallium oxide

(2008) Lakshmi Nagarajan et al.   NATURE MATERIALS