Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4954258
Keywords
-
Categories
Funding
- NSFC [61376084, 61421005, 61334007]
- Beijing Municipal Science and Technology Plan Projects [Z151100000915071]
- IMEC's industrial affiliation program on RRAM
- China Scholarship Council (CSC)
Ask authors/readers for more resources
The nanoscale resistive switching in hafnium oxide stack is investigated by the conductive atomic force microscopy (C-AFM). The initial oxide stack is insulating and electrical stress from the C-AFM tip induces nanometric conductive filaments. Multimode resistive switching can be observed in consecutive operation cycles at one spot. The different modes are interpreted in the framework of a low defect quantum point contact theory. The model implies that the optimization of the conductive filament active region is crucial for the future application of nanoscale resistive switching devices. Published by AIP Publishing.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available