Influence of oxygen vacancies in ALD HfO 2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO 2-x /Pt structure

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Title
Influence of oxygen vacancies in ALD HfO 2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO 2-x /Pt structure
Authors
Keywords
-
Journal
APPLIED SURFACE SCIENCE
Volume 434, Issue -, Pages 822-830
Publisher
Elsevier BV
Online
2017-11-07
DOI
10.1016/j.apsusc.2017.11.016

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