A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM

Title
A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM
Authors
Keywords
-
Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 102, Issue 4, Pages 901-907
Publisher
Springer Nature
Online
2011-01-25
DOI
10.1007/s00339-011-6271-x

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