Thermodynamics of Phase Transitions and Bipolar Filamentary Switching in Resistive Random-Access Memory

Dynamics of electroforming and electrically driven insulator-metal transition in NbOx selector

(2016) Jaehyuk Park et al.   APPLIED PHYSICS LETTERS

Novel Flexible and Cost-Effective Retention Assessment Method for TMO-Based RRAM

(2016) C. Y. Chen et al.   IEEE ELECTRON DEVICE LETTERS

New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM

(2016) M. Maestro et al.   SOLID-STATE ELECTRONICS

Bipolar switching in chalcogenide phase change memory

(2016) N. Ciocchini et al.   Scientific Reports

Validation and Extension of Local Temperature Evaluation of Conductive Filaments in RRAM Devices

(2015) E. Yalon et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Noise-Induced Resistance Broadening in Resistive Switching Memory—Part I: Intrinsic Cell Behavior

(2015) Stefano Ambrogio et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Thermometry of Filamentary RRAM Devices

(2015) Eilam Yalon et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Dynamics of electroforming in binary metal oxide-based resistive switching memory

(2015) Abhishek A. Sharma et al.   JOURNAL OF APPLIED PHYSICS

Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages

(2015) M. Maestro et al.   MICROELECTRONIC ENGINEERING

Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM

(2015) V.N. Kruchinin et al.   MICROELECTRONIC ENGINEERING

Detection of the insulating gap and conductive filament growth direction in resistive memories

(2015) E. Yalon et al.   Nanoscale

Conductance Quantization in Resistive Random Access Memory

(2015) Yang Li et al.   Nanoscale Research Letters

Atomic View of Filament Growth in Electrochemical Memristive Elements

(2015) Hangbing Lv et al.   Scientific Reports

Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

(2015) J. Muller et al.   ECS Journal of Solid State Science and Technology

Conductance Quantization in Resistive Random Access Memory

(2015) Yang Li et al.   Nanoscale Research Letters

Field-Induced Nucleation in the Presence of a Metal Electrode

(2015) V. G. Karpov et al.   Physical Review Applied

Heat Dissipation in Resistive Switching Devices: Comparison of Thermal Simulations and Experimental Results

(2014) Eilam Yalon et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Statistical Fluctuations in HfOx Resistive-Switching Memory: Part II—Random Telegraph Noise

(2014) Stefano Ambrogio et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Investigation of Low-Frequency Noise Characterization of 28-nm High-k pMOSFET with Embedded SiGe Source/Drain

(2014) Shih-Chang Tsai et al.   Journal of Nanomaterials

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

(2014) Umberto Celano et al.   NANO LETTERS

Quantum-size effects in hafnium-oxide resistive switching

(2013) Shibing Long et al.   APPLIED PHYSICS LETTERS

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

(2013) S. Privitera et al.   MICROELECTRONIC ENGINEERING

Physical electro-thermal model of resistive switching in bi-layered resistance-change memory

(2013) Sungho Kim et al.   Scientific Reports

Analysis of Complementary RRAM Switching

(2012) Dirk J. Wouters et al.   IEEE ELECTRON DEVICE LETTERS

In Situ Transmission Electron Microscopy Observation of Nanostructural Changes in Phase-Change Memory

(2011) Stefan Meister et al.   ACS Nano

Controlled oxygen vacancy induced p-type conductivity in HfO2−x thin films

(2011) Erwin Hildebrandt et al.   APPLIED PHYSICS LETTERS

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

(2011) Daniele Ielmini   IEEE TRANSACTIONS ON ELECTRON DEVICES

Thermodynamics of second phase conductive filaments

(2011) V. G. Karpov et al.   JOURNAL OF APPLIED PHYSICS

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model

(2010) Kyung Min Kim et al.   APPLIED PHYSICS LETTERS

Electrical conduction and Joule effect in one-dimensional chains of metallic beads: hysteresis under cycling DC currents and influence of electromagnetic pulses

(2010) P. Béquin et al.   GRANULAR MATTER

Nucleation of Crystals from Solution: Classical and Two-Step Models

(2009) Deniz Erdemir et al.   ACCOUNTS OF CHEMICAL RESEARCH

A unified model of nucleation switching

(2009) M. Nardone et al.   APPLIED PHYSICS LETTERS

Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

(2009) C. Schindler et al.   APPLIED PHYSICS LETTERS

Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films

(2009) M.A. Panzer et al.   IEEE ELECTRON DEVICE LETTERS

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

(2009) H.Y. Lee et al.   IEEE ELECTRON DEVICE LETTERS

Size distribution of CuCl nanoparticles in glass in various stages of nucleation

(2009) P. M. Valov et al.   PHYSICS OF THE SOLID STATE

Evidence of field induced nucleation in phase change memory

(2008) I. V. Karpov et al.   APPLIED PHYSICS LETTERS

Crystal nucleation in glasses of phase change memory

(2008) V. G. Karpov et al.   JOURNAL OF APPLIED PHYSICS

Field-induced nucleation in phase change memory

(2008) V. G. Karpov et al.   PHYSICAL REVIEW B