Dynamics of electroforming in binary metal oxide-based resistive switching memory

Electric-field-induced point defect redistribution in single-crystal TiO 2–x and effects on electrical transport

(2015) Ali Moballegh et al.   ACTA MATERIALIA

Oxygen Vacancy Creation, Drift, and Aggregation in TiO2-Based Resistive Switches at Low Temperature and Voltage

(2015) Jonghan Kwon et al.   ADVANCED FUNCTIONAL MATERIALS

Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches

(2014) Abhishek A. Sharma et al.   ADVANCED FUNCTIONAL MATERIALS

Mechanism of localized electrical conduction at the onset of electroforming in TiO2 based resistive switching devices

(2014) Mohammad Noman et al.   APPLIED PHYSICS LETTERS

Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2Films

(2014) Jian-Yang Lin et al.   Advances in Materials Science and Engineering

Transient characterization of the electroforming process in TiO2 based resistive switching devices

(2013) Mohammad Noman et al.   APPLIED PHYSICS LETTERS

Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors

(2012) Feng Miao et al.   ACS Nano

Forming mechanism of the bipolar resistance switching in double-layer memristive nanodevices

(2012) S B Lee et al.   NANOTECHNOLOGY

Evidence of field-induced nucleation switching in opal: VO2composites and VO2films

(2012) A. B. Pevtsov et al.   PHYSICAL REVIEW B

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Challenges and opportunities for future non-volatile memory technology

(2011) Yoshio Nishi   CURRENT APPLIED PHYSICS

Resistance switching of Cu/SiO2 memory cells studied under voltage and current-driven modes

(2010) Y. Bernard et al.   APPLIED PHYSICS LETTERS

Conductive path formation in glasses of phase change memory

(2010) M. Simon et al.   JOURNAL OF APPLIED PHYSICS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Resistance transition in metal oxides induced by electronic threshold switching

(2009) D. Ielmini et al.   APPLIED PHYSICS LETTERS

A unified model of nucleation switching

(2009) M. Nardone et al.   APPLIED PHYSICS LETTERS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Evidence of field induced nucleation in phase change memory

(2008) I. V. Karpov et al.   APPLIED PHYSICS LETTERS

Field-induced nucleation in phase change memory

(2008) V. G. Karpov et al.   PHYSICAL REVIEW B