Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages

Published 2015 View Full Article

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Title
Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages
Authors
Keywords
Resistive switching random access memory (RRAM), Metal–insulator–semiconductor (MIS), Fast ramped voltages, Time domain measurements
Journal
MICROELECTRONIC ENGINEERING
Volume 147, Issue -, Pages 176-179
Publisher
Elsevier BV
Online
2015-04-18
DOI
10.1016/j.mee.2015.04.057

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