Effects of barium incorporation into HfO2 gate dielectrics on reduction in charged defects: First-principles study

Published 2009 View Full Article

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Title
Effects of barium incorporation into HfO2 gate dielectrics on reduction in charged defects: First-principles study
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 2, Pages 022903
Publisher
AIP Publishing
Online
2009-01-14
DOI
10.1063/1.3070534
References
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