Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

(2016) Kevin G. Crawford et al.   APPLIED PHYSICS LETTERS

Determination of the Temperature Dependent Thermal Expansion Coefficients of Bulk AlN by HRXRD

(2016) H. Kröncke et al.   ACTA PHYSICA POLONICA A

Superior Surface Transfer Doping of Diamond with MoO3

(2014) Moshe Tordjman et al.   Advanced Materials Interfaces

Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study

(2013) Stephen A. O. Russell et al.   APPLIED PHYSICS LETTERS

Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate

(2013) Kazuyuki Hirama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Systematic investigation of surface and bulk electronic structure of undoped In-polar InN epilayers by hard X-ray photoelectron spectroscopy

(2013) Masataka Imura et al.   JOURNAL OF APPLIED PHYSICS

Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

(2013) J. W. Liu et al.   JOURNAL OF APPLIED PHYSICS

Interfacial chemical bonding state and band alignment of CaF2/hydrogen-terminated diamond heterojunction

(2013) J. W. Liu et al.   JOURNAL OF APPLIED PHYSICS

Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond

(2012) J. W. Liu et al.   APPLIED PHYSICS LETTERS

Development of AlN/diamond heterojunction field effect transistors

(2012) Masataka Imura et al.   DIAMOND AND RELATED MATERIALS

Electroluminescence and capacitance-voltage characteristics of single-crystal n-type AlN (0001)/p-type diamond (111) heterojunction diodes

(2011) Kazuyuki Hirama et al.   APPLIED PHYSICS LETTERS

Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy

(2011) K. Shi et al.   APPLIED SURFACE SCIENCE

Demonstration of diamond field effect transistors by AlN/diamond heterostructure

(2011) Masataka Imura et al.   Physica Status Solidi-Rapid Research Letters

Sorption properties of NO2 gas and its strong influence on hole concentration of H-terminated diamond surfaces

(2010) Michal Kubovic et al.   APPLIED PHYSICS LETTERS

AlN as passivation for surface channel FETs on H-terminated diamond

(2010) D. Kueck et al.   DIAMOND AND RELATED MATERIALS

High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

(2010) Amélie Dussaigne et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Heterostructure growth of a single-crystal hexagonal AlN (0001) layer on cubic diamond (111) surface

(2010) Kazuyuki Hirama et al.   JOURNAL OF APPLIED PHYSICS

Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy

(2010) K. Shi et al.   Nanoscale Research Letters

MOVPE growth of single-crystal hexagonal AlN on cubic diamond

(2009) Yoshitaka Taniyasu et al.   JOURNAL OF CRYSTAL GROWTH

Influence of off-cut angle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE

(2009) Jie-Jun Wu et al.   JOURNAL OF CRYSTAL GROWTH

GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

(2009) A. Dussaigne et al.   JOURNAL OF CRYSTAL GROWTH

Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy

(2009) Masataka Imura et al.   JOURNAL OF CRYSTAL GROWTH

Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations

(2008) P. D. C. King et al.   PHYSICAL REVIEW B