Journal
JOURNAL OF APPLIED PHYSICS
Volume 113, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4798366
Keywords
-
Categories
Funding
- Advanced Environmental Materials, Green Network of Excellence (GRENE)
- Ministry of Education, Culture, Sports, and Technology (MEXT) in Japan
- Grants-in-Aid for Scientific Research [25249054, 23760319] Funding Source: KAKEN
Ask authors/readers for more resources
CaF2 films are deposited on hydrogen-terminated diamond (H-diamond) by a radio-frequency sputter-deposition technique at room temperature. Interfacial chemical bonding state and band alignment of CaF2/H-diamond heterojunction are investigated by X-ray photoelectron spectroscopy. It is confirmed that there are only C-Ca bonds at the CaF2/H-diamond heterointerface. Valence and conductance band offsets of the CaF2/H-diamond heterojunciton are determined to be 3.7 +/- 0.2 and 0.3 +/- 0.2 eV, respectively. It shows a type I straddling band configuration. The large valence band offset suggests advantage of the CaF2/H-diamond heterojunciton for the development of high power and high frequency field effect transistors. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798366]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available