Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4940749
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Funding
- Disciplinary Research Program (DRP) of the La Trobe University
- Australian Research Council [DP150101673]
- National Natural Science Foundation of China [11574317, 21503233]
- EPSRC [EP/E054668/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [1726825, EP/E054668/1] Funding Source: researchfish
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Surface transfer doping of hydrogen-terminated diamond has been achieved utilising V2O5 as a surface electron accepting material. Contact between the oxide and diamond surface promotes the transfer of electrons from the diamond into the V2O5 as revealed by the synchrotron-based high resolution photoemission spectroscopy. Electrical characterization by Hall measurement performed before and after V2O5 deposition shows an increase in hole carrier concentration in the diamond from 3.0 x 10(12) to 1.8 x 10(13) cm(-2) at room temperature. High temperature Hall measurements performed up to 300 degrees C in atmosphere reveal greatly enhanced thermal stability of the hole channel produced using V2O5 in comparison with an air-induced surface conduction channel. Transfer doping of hydrogen-terminated diamond using high electron affinity oxides such as V2O5 is a promising approach for achieving thermally stable, high performance diamond based devices in comparison with air-induced surface transfer doping. (C) 2016 AIP Publishing LLC.
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