Journal
DIAMOND AND RELATED MATERIALS
Volume 19, Issue 7-9, Pages 932-935Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2010.02.026
Keywords
Diamond; H-terminated surface; Free surface passivation; FET
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Surface Channel MESFETs (SC-FET) have suffered from instabilities and drift in the past. To overcome these effects a suitable device passivation seems to be one of the key aspects. In this investigation Atomic Layer Deposition (ALD) of AlN has been applied to Surface Channel FETs on hydrogenated diamond. Despite a deposition temperature of 370 degrees C, where usually the FET channel is permanently degraded, transistor operation with 65% of the initial current level could be obtained. (C) 2010 Elsevier B.V. All rights reserved.
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