Demonstration of diamond field effect transistors by AlN/diamond heterostructure

Passivation of H-terminated diamond with MOCVD-aluminium nitride - a key to understand and stabilize its surface conductivity

(2010) Daniel Kueck et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Growth mechanism of c-axis-oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy

(2009) Masataka Imura et al.   JOURNAL OF CRYSTAL GROWTH

Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy

(2009) Masataka Imura et al.   JOURNAL OF CRYSTAL GROWTH

Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance

(2008) K. Hirama et al.   APPLIED PHYSICS LETTERS

Diamond MISFET based on boron delta-doped channel

(2008) H. El-Hajj et al.   DIAMOND AND RELATED MATERIALS

Surface-channel MESFET with boron-doped contact layer

(2007) D. Kueck et al.   DIAMOND AND RELATED MATERIALS