4.7 Article

Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy

Journal

APPLIED SURFACE SCIENCE
Volume 257, Issue 18, Pages 8110-8112

Publisher

ELSEVIER
DOI: 10.1016/j.apsusc.2011.04.118

Keywords

Valence band offset; GaN/diamond heterojunction; XPS; Conduction band offset

Funding

  1. 863 High Technology R&D Program of China [2007AA03Z402, 2007AA03Z451]
  2. Special Funds for Major State Basic Research Project (973 program) of China [2006CB604907]
  3. National Science Foundation of China [60506002, 60776015]

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XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. The valence band offset (VBO) was determined to be 0.38 +/- 0.15 eV and a type-II heterojunction with a conduction band offset (CBO) of 2.43 +/- 0.15 eV was obtained. (C) 2011 Elsevier B.V. All rights reserved.

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