Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel
出版年份 2017 全文链接
标题
Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel
作者
关键词
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出版物
JOURNAL OF APPLIED PHYSICS
Volume 121, Issue 2, Pages 025702
出版商
AIP Publishing
发表日期
2017-01-12
DOI
10.1063/1.4972979
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability
- (2016) Kevin G. Crawford et al. APPLIED PHYSICS LETTERS
- Determination of the Temperature Dependent Thermal Expansion Coefficients of Bulk AlN by HRXRD
- (2016) H. Kröncke et al. ACTA PHYSICA POLONICA A
- Superior Surface Transfer Doping of Diamond with MoO3
- (2014) Moshe Tordjman et al. Advanced Materials Interfaces
- Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study
- (2013) Stephen A. O. Russell et al. APPLIED PHYSICS LETTERS
- Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate
- (2013) Kazuyuki Hirama et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Systematic investigation of surface and bulk electronic structure of undoped In-polar InN epilayers by hard X-ray photoelectron spectroscopy
- (2013) Masataka Imura et al. JOURNAL OF APPLIED PHYSICS
- Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors
- (2013) J. W. Liu et al. JOURNAL OF APPLIED PHYSICS
- Interfacial chemical bonding state and band alignment of CaF2/hydrogen-terminated diamond heterojunction
- (2013) J. W. Liu et al. JOURNAL OF APPLIED PHYSICS
- Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond
- (2012) J. W. Liu et al. APPLIED PHYSICS LETTERS
- Development of AlN/diamond heterojunction field effect transistors
- (2012) Masataka Imura et al. DIAMOND AND RELATED MATERIALS
- Electroluminescence and capacitance-voltage characteristics of single-crystal n-type AlN (0001)/p-type diamond (111) heterojunction diodes
- (2011) Kazuyuki Hirama et al. APPLIED PHYSICS LETTERS
- Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy
- (2011) K. Shi et al. APPLIED SURFACE SCIENCE
- Demonstration of diamond field effect transistors by AlN/diamond heterostructure
- (2011) Masataka Imura et al. Physica Status Solidi-Rapid Research Letters
- Sorption properties of NO2 gas and its strong influence on hole concentration of H-terminated diamond surfaces
- (2010) Michal Kubovic et al. APPLIED PHYSICS LETTERS
- AlN as passivation for surface channel FETs on H-terminated diamond
- (2010) D. Kueck et al. DIAMOND AND RELATED MATERIALS
- High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate
- (2010) Amélie Dussaigne et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Heterostructure growth of a single-crystal hexagonal AlN (0001) layer on cubic diamond (111) surface
- (2010) Kazuyuki Hirama et al. JOURNAL OF APPLIED PHYSICS
- Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
- (2010) K. Shi et al. Nanoscale Research Letters
- MOVPE growth of single-crystal hexagonal AlN on cubic diamond
- (2009) Yoshitaka Taniyasu et al. JOURNAL OF CRYSTAL GROWTH
- Influence of off-cut angle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE
- (2009) Jie-Jun Wu et al. JOURNAL OF CRYSTAL GROWTH
- GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy
- (2009) A. Dussaigne et al. JOURNAL OF CRYSTAL GROWTH
- Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy
- (2009) Masataka Imura et al. JOURNAL OF CRYSTAL GROWTH
- Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations
- (2008) P. D. C. King et al. PHYSICAL REVIEW B
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