Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors
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Title
Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 8, Pages 084108
Publisher
AIP Publishing
Online
2013-08-29
DOI
10.1063/1.4819108
References
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Related references
Note: Only part of the references are listed.- Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric
- (2013) J. W. Liu et al. APPLIED PHYSICS LETTERS
- Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al$_{2}$O$_{3}$ Overlayer and its Electric Properties
- (2012) Makoto Kasu et al. Applied Physics Express
- Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond
- (2012) J. W. Liu et al. APPLIED PHYSICS LETTERS
- Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices
- (2012) Shaoheng Cheng et al. APPLIED PHYSICS LETTERS
- Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al$_{2}$O$_{3}$ Passivation Layer
- (2012) Kazuyuki Hirama et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Growth and electrical characterisation of δ-doped boron layers on (111) diamond surfaces
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- Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond
- (2011) M. T. Edmonds et al. APPLIED PHYSICS LETTERS
- Scaling of Hydrogen-Terminated Diamond FETs to Sub-100-nm Gate Dimensions
- (2011) D A J Moran et al. IEEE ELECTRON DEVICE LETTERS
- Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3
- (2011) Takeyasu Saito et al. JOURNAL OF ELECTRONIC MATERIALS
- Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics
- (2011) Y.C. Chang et al. MICROELECTRONIC ENGINEERING
- Demonstration of diamond field effect transistors by AlN/diamond heterostructure
- (2011) Masataka Imura et al. Physica Status Solidi-Rapid Research Letters
- Properties of Hydrogen Terminated Diamond as a Photocathode
- (2011) J. D. Rameau et al. PHYSICAL REVIEW LETTERS
- High-Performance P-Channel Diamond Metal–Oxide–Semiconductor Field-Effect Transistors on H-Terminated (111) Surface
- (2010) Kazuyuki Hirama et al. Applied Physics Express
- Electronic structures of c-plane and a-plane AlN/ZnO heterointerfaces determined by synchrotron radiation photoemission spectroscopy
- (2010) J. W. Liu et al. APPLIED PHYSICS LETTERS
- HfO2–GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer
- (2010) G. He et al. APPLIED PHYSICS LETTERS
- Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy
- (2010) Xiaoqing Xu et al. JOURNAL OF APPLIED PHYSICS
- Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy
- (2009) Masataka Imura et al. JOURNAL OF CRYSTAL GROWTH
- Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance
- (2008) K. Hirama et al. APPLIED PHYSICS LETTERS
- Surface-channel MESFET with boron-doped contact layer
- (2007) D. Kueck et al. DIAMOND AND RELATED MATERIALS
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