Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate

Published 2013 View Full Article

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Title
Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 51, Issue 1S, Pages 01AG09
Publisher
Japan Society of Applied Physics
Online
2013-12-21
DOI
10.7567/jjap.51.01ag09

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