First principles calculations of the interface properties of a-Al2O3/MoS2 and effects of biaxial strain

First principles calculations of La2O3/GaAs interface properties under biaxial strain and hydrostatic pressure

(2017) Li-Bin Shi et al.   PHYSICA B-CONDENSED MATTER

First-principles study of graphene under c-HfO2(111) layers: Electronic structures and transport properties

(2016) Tomoaki Kaneko et al.   APPLIED PHYSICS LETTERS

Effect of biaxial strain and external electric field on electronic properties of MoS 2 monolayer: A first-principle study

(2016) Chuong V. Nguyen et al.   CHEMICAL PHYSICS

Band structure modulation in MoS 2 multilayers and heterostructures through electric field and strain

(2016) Nicholas A. Lanzillo et al.   COMPUTATIONAL MATERIALS SCIENCE

Two-dimensional electron gas in GaAs/SrHfO3 heterostructure

(2016) Jianli Wang et al.   JOURNAL OF APPLIED PHYSICS

Investigation of the interface characteristics of Y2O3/GaAs under biaxial strain, triaxial strain, and non-strain conditions

(2016) Li-Bin Shi et al.   JOURNAL OF APPLIED PHYSICS

Interfacial Interaction between HfO2 and MoS2: From Thin Films to Monolayer

(2016) Ming Yang et al.   Journal of Physical Chemistry C

Performance analysis of uniaxially strained monolayer black phosphorus and blue phosphorus n-MOSFET and p-MOSFET

(2016) L. Banerjee et al.   Journal of Computational Electronics

Al2O3 as a suitable substrate and a dielectric layer for n-layer MoS2

(2015) Arunima K. Singh et al.   APPLIED PHYSICS LETTERS

Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

(2015) Katsuhiko Nishiguchi et al.   APPLIED PHYSICS LETTERS

Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer

(2015) Seokki Son et al.   APPLIED PHYSICS LETTERS

Strain-induced band structure and mobility modulation in graphitic blue phosphorus

(2015) L.Z. Liu et al.   APPLIED SURFACE SCIENCE

Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain

(2015) Sheng Yu et al.   APPLIED SURFACE SCIENCE

Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

(2015) Gui-Bin Liu et al.   CHEMICAL SOCIETY REVIEWS

Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors

(2015) Jiwon Chang   JOURNAL OF APPLIED PHYSICS

Single-crystal atomic layer deposited Y2O3 on GaAs(001) – growth, structural, and electrical characterization

(2015) S.Y. Wu et al.   MICROELECTRONIC ENGINEERING

Evolution of Electronic Structure as a Function of Layer Thickness in Group-VIB Transition Metal Dichalcogenides: Emergence of Localization Prototypes

(2015) Lijun Zhang et al.   NANO LETTERS

Double resonance Raman modes in monolayer and few-layerMoTe2

(2015) Huaihong Guo et al.   PHYSICAL REVIEW B

Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain

(2015) Pengying Chang et al.   SOLID-STATE ELECTRONICS

Graphene stabilized high-κ dielectric Y2O3 (111) monolayers and their interfacial properties

(2015) Ting Ting Song et al.   RSC Advances

The energy-band alignment at molybdenum disulphide and high-k dielectrics interfaces

(2014) Junguang Tao et al.   APPLIED PHYSICS LETTERS

Optical properties of amorphous Al2O3 thin films prepared by a sol–gel process

(2014) Baofu Hu et al.   CERAMICS INTERNATIONAL

Stacking stability of MoS2 bilayer: An ab initio study

(2014) Peng Tao et al.   Chinese Physics B

Theoretical study of thermoelectric properties of MoS2

(2014) Huai-Hong Guo et al.   Chinese Physics B

Band Alignment and Band Gap Characterization of La2O3Films on Si Substrates Grown by Radio Frequency Magnetron Sputtering

(2014) Qi-Ya Liu et al.   CHINESE PHYSICS LETTERS

Record Hole Mobility at High Vertical Fields in Planar Strained Germanium on Insulator With Asymmetric Strain

(2014) Winston Chern et al.   IEEE ELECTRON DEVICE LETTERS

Theoretical Study of Optical Properties of Native Point Defects in α-Al2O3

(2014) Teeraphat Watcharatharapong et al.   INTEGRATED FERROELECTRICS

Electrical properties of amorphous-Al2O3/single-crystal ZnO heterointerfaces

(2013) J. W. Liu et al.   APPLIED PHYSICS LETTERS

Nitrogen passivation at GaAs:Al2O3 interfaces

(2013) Yuzheng Guo et al.   APPLIED PHYSICS LETTERS

Impact of carbon and nitrogen impurities in high-κ dielectrics on metal-oxide-semiconductor devices

(2013) Minseok Choi et al.   APPLIED PHYSICS LETTERS

Atomistic full-band simulations of monolayer MoS2 transistors

(2013) Jiwon Chang et al.   APPLIED PHYSICS LETTERS

Band offsets and heterostructures of two-dimensional semiconductors

(2013) Jun Kang et al.   APPLIED PHYSICS LETTERS

Chemical trends of defects at HfO2:GaAs and Al2O3:GaAs/InAs/InP/GaSb interfaces

(2013) Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

(2013) J. W. Liu et al.   JOURNAL OF APPLIED PHYSICS

High pressure effect on structure, electronic structure, and thermoelectric properties of MoS2

(2013) Huaihong Guo et al.   JOURNAL OF APPLIED PHYSICS

A first-principles study on the effect of biaxial strain on the ultimate performance of monolayer MoS2-based double gate field effect transistor

(2013) Seyed Mohammad Tabatabaei et al.   JOURNAL OF APPLIED PHYSICS

Al2O3/TiO2 stack layers for effective surface passivation of crystalline silicon

(2013) Dongchul Suh et al.   JOURNAL OF APPLIED PHYSICS

Hole doped Dirac states in silicene by biaxial tensile strain

(2013) T. P. Kaloni et al.   JOURNAL OF APPLIED PHYSICS

Native point defects and dangling bonds in α-Al2O3

(2013) Minseok Choi et al.   JOURNAL OF APPLIED PHYSICS

Solution Properties of the System ZrSiO4–HfSiO4: A Computational and Experimental Study

(2013) Agustín Cota et al.   Journal of Physical Chemistry C

Defects at Ge/oxide and III–V/oxide interfaces

(2013) C.G. Van de Walle et al.   MICROELECTRONIC ENGINEERING

First principles study of structural and electronic properties of cubic phase of ZrO2 and HfO2

(2013) Yong-Liang Yang et al.   PHYSICA B-CONDENSED MATTER

Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates

(2013) Gang He et al.   SURFACE SCIENCE REPORTS

Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors

(2013) S.-Y. Cheng et al.   THIN SOLID FILMS

First principles calculations of the band offset at SrTiO3−TiO2 interfaces

(2012) Nunzio Roberto D'Amico et al.   APPLIED PHYSICS LETTERS

First principle study of valence-band offsets at AlN/diamond heterojunctions

(2012) Leonardo Silvestri et al.   DIAMOND AND RELATED MATERIALS

Strain engineering for bumping over IPs: Numerical investigations of thermo-mechanical stress induced mobility variations for CMOS 32nm and beyond

(2012) Vincent Fiori et al.   MICROELECTRONICS RELIABILITY

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Low-frequency noise in high-k LaLuO3/TiN MOSFETs

(2012) Maryam Olyaei et al.   SOLID-STATE ELECTRONICS

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices

(2011) J. R. Weber et al.   JOURNAL OF APPLIED PHYSICS

Electronic and chemical properties of the c-Si/Al2O3 interface

(2011) Florian Werner et al.   JOURNAL OF APPLIED PHYSICS

The role of oxygen-related defects and hydrogen impurities in HfO2 and ZrO2

(2011) J.L. Lyons et al.   MICROELECTRONIC ENGINEERING

Band-gap transition induced by interlayer van der Waals interaction in MoS2

(2011) S. W. Han et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Characterization of Y2O3 gate dielectric on n-GaAs substrates

(2009) P.S. Das et al.   APPLIED SURFACE SCIENCE

Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers

(2009) Y. Zhang et al.   JOURNAL OF APPLIED PHYSICS

Electronic structures of β-Si3N4(0001)/Si(111) interfaces: Perfect bonding and dangling bond effects

(2009) M. Yang et al.   JOURNAL OF APPLIED PHYSICS

Electronic structure of oxygen vacancies in La2O3, Lu2O3 and LaLuO3

(2009) Ka Xiong et al.   MICROELECTRONIC ENGINEERING

Impact of germanium related defects on electrical performance of hafnium oxide

(2008) Qing-Qing Sun et al.   APPLIED PHYSICS LETTERS

Interface properties of Ge3N4/Ge(111): Ab initio and x-ray photoemission spectroscopy study

(2008) M. Yang et al.   APPLIED PHYSICS LETTERS

Effect of chlorine residue on electrical performance of atomic layer deposited hafnium silicate

(2008) Qing-Qing Sun et al.   JOURNAL OF APPLIED PHYSICS

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

Coaxial Metal-Oxide-Semiconductor (MOS) Au/Ga2O3/GaN Nanowires

(2008) Chin-Hua Hsieh et al.   NANO LETTERS