Nitrogen passivation at GaAs:Al2O3 interfaces

Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

(2012) Takuya Hoshii et al.   JOURNAL OF APPLIED PHYSICS

Defect states at III-V semiconductor oxide interfaces

(2011) L. Lin et al.   APPLIED PHYSICS LETTERS

Bonding principles of passivation mechanism at III-V-oxide interfaces

(2011) J. Robertson et al.   APPLIED PHYSICS LETTERS

Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications

(2011) C.L. Hinkle et al.   CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE

Si passivation effects on atomic bonding and electronic properties at HfO2/GaAs interface: A first-principles study

(2011) Weichao Wang et al.   JOURNAL OF APPLIED PHYSICS

Is interfacial chemistry correlated to gap states for high-k/III–V interfaces?

(2011) W. Wang et al.   MICROELECTRONIC ENGINEERING

Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

(2011) Robert M. Wallace et al.   MRS BULLETIN

Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2

(2010) T. Hoshii et al.   APPLIED PHYSICS LETTERS

Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces

(2010) T. Haimoto et al.   APPLIED PHYSICS LETTERS

Model of interface states at III-V oxide interfaces

(2009) John Robertson   APPLIED PHYSICS LETTERS

S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates

(2008) F. S. Aguirre-Tostado et al.   APPLIED PHYSICS LETTERS

Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment

(2008) N. V. Nguyen et al.   APPLIED PHYSICS LETTERS

Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

(2008) A. M. Sonnet et al.   APPLIED PHYSICS LETTERS

High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

(2008) Y. Xuan et al.   IEEE ELECTRON DEVICE LETTERS

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

(2008) Shinichi Takagi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)

(2008) Peide D. Ye   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A