Native point defects and dangling bonds in α-Al2O3

Effect of annealing ambient and temperature on the electrical characteristics of atomic layer deposition Al2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitors and MOSFETs

(2012) Jenny Hu et al.   JOURNAL OF APPLIED PHYSICS

Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors

(2012) G. W. Paterson et al.   JOURNAL OF APPLIED PHYSICS

Jahn-Teller effect in the phonon properties of defective SrTiO3from first principles

(2012) Robert Evarestov et al.   PHYSICAL REVIEW B

Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors

(2012) John L. Lyons et al.   PHYSICAL REVIEW LETTERS

Assessment of GaN Surface Pretreatment for Atomic Layer Deposited High-kDielectrics

(2011) Neeraj Nepal et al.   Applied Physics Express

Electronic and structural properties of the oxygen vacancy in BaTiO3

(2011) Minseok Choi et al.   APPLIED PHYSICS LETTERS

Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

(2011) Michele Esposto et al.   APPLIED PHYSICS LETTERS

Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices

(2011) J. R. Weber et al.   JOURNAL OF APPLIED PHYSICS

Hybrid density functional study of oxygen vacancies in KTaO3and NaTaO3

(2011) Minseok Choi et al.   PHYSICAL REVIEW B

Point defects in ZnO: an approach from first principles

(2011) Fumiyasu Oba et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

(2010) Eun Ji Kim et al.   APPLIED PHYSICS LETTERS

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

(2010) Byungha Shin et al.   APPLIED PHYSICS LETTERS

Oxygen vacancy levels and electron transport in Al2O3

(2010) D. Liu et al.   APPLIED PHYSICS LETTERS

Electrostatic interactions between charged defects in supercells

(2010) Christoph Freysoldt et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Hybrid functional studies of the oxygen vacancy inTiO2

(2010) A. Janotti et al.   PHYSICAL REVIEW B

Point defects in Al2O3 and their impact on gate stacks

(2009) J.R. Weber et al.   MICROELECTRONIC ENGINEERING

Supercell size scaling of density functional theory formation energies of charged defects

(2009) N. D. M. Hine et al.   PHYSICAL REVIEW B

Intrinsicn-Type Behavior in Transparent Conducting Oxides: A Comparative Hybrid-Functional Study ofIn2O3,SnO2, and ZnO

(2009) Péter Ágoston et al.   PHYSICAL REVIEW LETTERS

FullyAb InitioFinite-Size Corrections for Charged-Defect Supercell Calculations

(2009) Christoph Freysoldt et al.   PHYSICAL REVIEW LETTERS

Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

(2008) Y. C. Chang et al.   APPLIED PHYSICS LETTERS

Defect energetics in ZnO: A hybrid Hartree-Fock density functional study

(2008) Fumiyasu Oba et al.   PHYSICAL REVIEW B