Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device

Impact of program/erase operation on the performances of oxide-based resistive switching memory

(2015) Guoming Wang et al.   Nanoscale Research Letters

Associative Learning with Temporal Contiguity in a Memristive Circuit for Large-Scale Neuromorphic Networks

(2015) Yi Li et al.   Advanced Electronic Materials

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

(2014) Haitao Sun et al.   ADVANCED FUNCTIONAL MATERIALS

Uniformity Improvement in 1T1R RRAM With Gate Voltage Ramp Programming

(2014) Hongtao Liu et al.   IEEE ELECTRON DEVICE LETTERS

A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis

(2014) Luca Larcher et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

(2014) Mario Lanza   Materials

Stochastic switching of TiO2-based memristive devices with identical initial memory states

(2014) Qingjiang Li et al.   Nanoscale Research Letters

Low power W:AlOx/WOx bilayer resistive switching structure based on conductive filament formation and rupture mechanism

(2013) Yue Bai et al.   APPLIED PHYSICS LETTERS

A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Statistical Model and Rapid Prediction of RRAM SET Speed–Disturb Dilemma

(2013) Wun-Cheng Luo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries

(2013) Onofrio Pirrotta et al.   JOURNAL OF APPLIED PHYSICS

Ultrafast Synaptic Events in a Chalcogenide Memristor

(2013) Yi Li et al.   Scientific Reports

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

(2013) Shibing Long et al.   Scientific Reports

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Percolative Model and Thermodynamic Analysis of Oxygen-Ion-Mediated Resistive Switching

(2012) Nagarajan Raghavan et al.   IEEE ELECTRON DEVICE LETTERS

A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

(2012) Yang Lu et al.   IEEE ELECTRON DEVICE LETTERS

On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

(2012) Ximeng Guan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Reset Statistics of NiO-Based Resistive Switching Memories

(2011) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Improved Resistive Switching Uniformity in $ \hbox{Cu/HfO}_{2}/\hbox{Pt}$ Devices by Using Current Sweeping Mode

(2011) Wentai Lian et al.   IEEE ELECTRON DEVICE LETTERS

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

(2011) Yong-En Syu et al.   IEEE ELECTRON DEVICE LETTERS

A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications

(2011) Kuk-Hwan Kim et al.   NANO LETTERS

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

(2011) D Ielmini et al.   NANOTECHNOLOGY

Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

(2011) Mario Lanza et al.   Nanoscale Research Letters

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Analytical Cell-Based Model for the Breakdown Statistics of Multilayer Insulator Stacks

(2009) Jordi Sune et al.   IEEE ELECTRON DEVICE LETTERS

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today