A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

(2011) B. Chen et al.   IEEE ELECTRON DEVICE LETTERS

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

(2011) Yong-En Syu et al.   IEEE ELECTRON DEVICE LETTERS

Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM

(2011) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM

(2010) W.C. Chien et al.   IEEE ELECTRON DEVICE LETTERS

A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM

(2010) Shimeng Yu et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today