Statistical Model and Rapid Prediction of RRAM SET Speed–Disturb Dilemma

Rapid Prediction of RRAM RESET-State Disturb by Ramped Voltage Stress

(2012) Wun-Cheng Luo et al.   IEEE ELECTRON DEVICE LETTERS

Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches

(2011) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Electrode dependence of filament formation in HfO2 resistive-switching memory

(2011) Kuan-Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

Modeling the breakdown statistics of Al2O3/HfO2 nanolaminates grown by atomic-layer-deposition

(2011) A. Conde et al.   SOLID-STATE ELECTRONICS

Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode

(2010) Jiun-Jia Huang et al.   APPLIED PHYSICS LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Random Circuit Breaker Network Model for Unipolar Resistance Switching

(2008) Seung Chul Chae et al.   ADVANCED MATERIALS