Low power W:AlOx/WOx bilayer resistive switching structure based on conductive filament formation and rupture mechanism

A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM

(2011) W. C. Chien et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Roles of silver oxide in the bipolar resistance switching devices with silver electrode

(2011) C. Y. Dong et al.   APPLIED PHYSICS LETTERS

Low Reset Current in Stacked $\hbox{AlO}_{x}/ \hbox{WO}_{x}$ Resistive Switching Memory

(2011) Y. L. Song et al.   IEEE ELECTRON DEVICE LETTERS

High-$\kappa$ Al$_{2}$O$_{3}$/WO$_{x}$ Bilayer Dielectrics for Low-Power Resistive Switching Memory Applications

(2011) Writam Banerjee et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Resistive switching characteristics and mechanism of thermally grown WOx thin films

(2011) Kuyyadi P. Biju et al.   JOURNAL OF APPLIED PHYSICS

Low-power TiN/Al2O3/Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation

(2011) Yi Wu et al.   JOURNAL OF APPLIED PHYSICS

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS

Improvement of resistive switching characteristics in ZrO2film by embedding a thin TiOxlayer

(2011) Yingtao Li et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure

(2010) Inrok Hwang et al.   APPLIED PHYSICS LETTERS

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

(2010) Joonmyoung Lee et al.   APPLIED PHYSICS LETTERS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction

(2010) Sungho Kim et al.   APPLIED PHYSICS LETTERS

Excellent Switching Uniformity of Cu-Doped $\hbox{MoO}_{x}/\hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications

(2009) Jaesik Yoon et al.   IEEE ELECTRON DEVICE LETTERS