Characterization of PECVD Si3N4 thin film in multiple oxide–nitride stack for 3D-NAND flash memory

Understanding the Role of Concentrated Phosphoric Acid Solutions as High-Temperature Silicon Nitride Etchants

(2021) Tal Joseph et al.   ECS Journal of Solid State Science and Technology

Architecture and Process Integration Overview of 3D NAND Flash Technologies

(2021) Geun Ho Lee et al.   Applied Sciences-Basel

3-D NAND Technology Achievements and Future Scaling Perspectives

(2020) Akira Goda   IEEE TRANSACTIONS ON ELECTRON DEVICES

Parametric study and residual gas analysis of large-area silicon-nitride thin-film deposition by plasma-enhanced chemical vapor deposition

(2019) Dong Xiang et al.   VACUUM

A Design for Selective Wet Etching of Si 3 N 4 /SiO 2 in Phosphoric Acid Using a Single Wafer Processor

(2018) Ying-Hsueh Chang Chien et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Hydrogen-induced program threshold voltage degradation analysis in SONOS wafer

(2016) Qing Lin et al.   SOLID-STATE ELECTRONICS

Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography

(2016) Yorinobu Kunimune et al.   AIP Advances

Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

(2016) J. Provine et al.   AIP Advances

Effect of ammonia (NH3) plasma treatment on silicon nitride (SiNx) gate dielectric for organic thin film transistor with soluble organic semiconductor

(2011) DongWoo Kim et al.   CURRENT APPLIED PHYSICS