Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography
Published 2016 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography
Authors
Keywords
-
Journal
AIP Advances
Volume 6, Issue 4, Pages 045121
Publisher
AIP Publishing
Online
2016-04-29
DOI
10.1063/1.4948558
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Phosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography
- (2015) Bin Han et al. APPLIED PHYSICS LETTERS
- Direct observation of hydrogen and deuterium in oxide grain boundaries in corroded Zirconium alloys
- (2015) G. Sundell et al. CORROSION SCIENCE
- Atom probe tomography observation of hydrogen in high-Mn steel and silver charged via an electrolytic route
- (2014) D. Haley et al. INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
- High resolution secondary ion mass spectrometry analysis of hydrogen behavior in SiO2/SiN/SiO2films with thermal treatment
- (2014) Yusuke Sakurai et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Three-Dimensional Characterization of Deuterium Implanted in Silicon Using Atom Probe Tomography
- (2013) Hisashi Takamizawa et al. Applied Physics Express
- Hydrogen analysis in APT: Methods to control adsorption and dissociation of H2
- (2013) G. Sundell et al. ULTRAMICROSCOPY
- Channel Dopant Distribution in Metal–Oxide–Semiconductor Field-Effect Transistors Analyzed by Laser-Assisted Atom Probe Tomography
- (2011) Hisashi Takamizawa et al. Applied Physics Express
- Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures
- (2011) Y. Shimizu et al. JOURNAL OF APPLIED PHYSICS
- Atom Probe Tomography of Zinc Oxide Nanowires
- (2011) Nabil Dawahre et al. JOURNAL OF ELECTRONIC MATERIALS
- Characteristics of cross-sectional atom probe analysis on semiconductor structures
- (2011) S. Koelling et al. ULTRAMICROSCOPY
- Broadening the applications of the atom probe technique by ultraviolet femtosecond laser
- (2010) K. Hono et al. ULTRAMICROSCOPY
- Dopant distributions in n-MOSFET structure observed by atom probe tomography
- (2009) K. Inoue et al. ULTRAMICROSCOPY
- Monolayer segregation of As atoms at the interface between gate oxide and Si substrate in a metal-oxide-semiconductor field effect transistor by three-dimensional atom-probe technique
- (2008) Koji Inoue et al. APPLIED PHYSICS LETTERS
- Three dimensional characterization of dopant distribution in polycrystalline silicon by laser-assisted atom probe
- (2008) K. Inoue et al. APPLIED PHYSICS LETTERS
- Analysis of Bulk Dielectrics with Atom Probe Tomography
- (2008) DJ Larson et al. MICROSCOPY AND MICROANALYSIS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started