Hydrogen-induced program threshold voltage degradation analysis in SONOS wafer

Title
Hydrogen-induced program threshold voltage degradation analysis in SONOS wafer
Authors
Keywords
SONOS, ONO stack, Hydrogen-induced charge loss, Sort yield, Program/erase
Journal
SOLID-STATE ELECTRONICS
Volume 116, Issue -, Pages 60-64
Publisher
Elsevier BV
Online
2015-12-13
DOI
10.1016/j.sse.2015.11.038

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