Architecture and Process Integration Overview of 3D NAND Flash Technologies
Published 2021 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Architecture and Process Integration Overview of 3D NAND Flash Technologies
Authors
Keywords
-
Journal
Applied Sciences-Basel
Volume 11, Issue 15, Pages 6703
Publisher
MDPI AG
Online
2021-07-21
DOI
10.3390/app11156703
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- 3-bit multilevel operation with accurate programming scheme in TiO x /Al2O3 memristor crossbar array for quantized neuromorphic system
- (2021) Tae-Hyeon Kim et al. NANOTECHNOLOGY
- Crystallization behavior and electrical characteristics of Ga-Sb thin films for phase change memory
- (2020) Qixun Yin et al. NANOTECHNOLOGY
- Uniform multilevel switching of graphene oxide-based RRAM achieved by embedding with gold nanoparticles for image pattern recognition
- (2020) Meng Qi et al. APPLIED PHYSICS LETTERS
- A Parallel Multibit Programing Scheme With High Precision for RRAM-Based Neuromorphic Systems
- (2020) Junren Chen et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Accurate deep neural network inference using computational phase-change memory
- (2020) Vinay Joshi et al. Nature Communications
- A Novel Vector-matrix Multiplication (VMM) Architecture based on NAND Memory Array
- (2020) Suhyeon Kim et al. Journal of Semiconductor Technology and Science
- Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array
- (2020) Tae-Hyeon Kim et al. APPLIED PHYSICS LETTERS
- Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM
- (2020) Sungjoon Kim et al. APPLIED PHYSICS LETTERS
- Technological Design of 3D NAND-Based Compute-in-Memory Architecture for GB-Scale Deep Neural Network
- (2020) Wonbo Shim et al. IEEE ELECTRON DEVICE LETTERS
- Investigation on Phase-change Synapse Devices for More Gradual Switching
- (2019) Minkyu Shin et al. Journal of Semiconductor Technology and Science
- Engineering thermal and electrical interface properties of phase change memory with monolayer MoS2
- (2019) Christopher M. Neumann et al. APPLIED PHYSICS LETTERS
- Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing
- (2019) Yuta Saito et al. APPLIED PHYSICS LETTERS
- Dual-Functional Nanoscale Devices Using Phase-Change Materials: A Reconfigurable Perfect Absorber with Nonvolatile Resistance-Change Memory Characteristics
- (2019) Niloufar Raeis-Hosseini et al. Applied Sciences-Basel
- Unsupervised online learning of temporal information in spiking neural network using TFT-type NOR flash memory devices
- (2019) Seongbin Oh et al. NANOTECHNOLOGY
- Manipulation of the electrical behaviors of Cu/MXene/SiO2/W memristor
- (2019) Yuqi Wang et al. Applied Physics Express
- The Impact of Resistance Drift of Phase Change Memory (PCM) Synaptic Devices on Artificial Neural Network Performance
- (2019) Sangheon Oh et al. IEEE ELECTRON DEVICE LETTERS
- Understanding the effect of dry etching on nanoscale phase-change memory
- (2019) Md Khirul Anam et al. NANOTECHNOLOGY
- Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part I: Cell Operation
- (2019) Gerardo Malavena et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology
- (2019) Noboru Shibata et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- Emerging neuromorphic devices
- (2019) Daniele Ielmini et al. NANOTECHNOLOGY
- System-Level Simulation of Hardware Spiking Neural Network Based on Synaptic Transistors and I&F Neuron Circuits
- (2018) Sungmin Hwang et al. IEEE ELECTRON DEVICE LETTERS
- Spiking Neural Network Using Synaptic Transistors and Neuron Circuits for Pattern Recognition With Noisy Images
- (2018) Hyungjin Kim et al. IEEE ELECTRON DEVICE LETTERS
- A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory
- (2018) Chulbum Kim et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- 256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers
- (2017) Dongku Kang et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- Silicon synaptic transistor for hardware-based spiking neural network and neuromorphic system
- (2017) Hyungjin Kim et al. NANOTECHNOLOGY
- Silicon-Based Floating-Body Synaptic Transistor With Frequency-Dependent Short- and Long-Term Memories
- (2016) Hyungjin Kim et al. IEEE ELECTRON DEVICE LETTERS
- A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate
- (2016) IEEE JOURNAL OF SOLID-STATE CIRCUITS
- Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming
- (2015) Ki-Tae Park et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- Highly Scalable Horizontal Channel 3-D NAND Memory Excellent in Compatibility With Conventional Fabrication Technology
- (2013) Kiwamu Sakuma et al. IEEE ELECTRON DEVICE LETTERS
- Single-Crystalline Si STacked ARray (STAR) NAND Flash Memory
- (2011) Jang-Gn Yun et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray
- (2011) Yoon Kim et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A stacked memory device on logic 3D technology for ultra-high-density data storage
- (2011) Jiyoung Kim et al. NANOTECHNOLOGY
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now