A Design for Selective Wet Etching of Si 3 N 4 /SiO 2 in Phosphoric Acid Using a Single Wafer Processor

Authors

Keywords

Journal

Volume 165, Issue 4, Pages H3187-H3191

Publisher

The Electrochemical Society

Online

2018-03-22

DOI

10.1149/2.0281804jes

References

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