Comparative analysis of low-frequency noise based resistive switching phenomenon for filamentary and interfacial RRAM devices

Compatible resistive switching mechanisms in Ni/SiOx/ITO and application to neuromorphic systems

(2022) Minsu Park et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Prospects and applications of volatile memristors

(2022) Dahye Kim et al.   APPLIED PHYSICS LETTERS

Effect of SiO2 sublayer on the retention characteristics of nanometer-sized Si3N4 memristive devices investigated by low-frequency noise spectroscopy

(2022) Viktor S. Kochergin et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Toward Reflective Spiking Neural Networks Exploiting Memristive Devices

(2022) Valeri A. Makarov et al.   Frontiers in Computational Neuroscience

Improving endurance and reliability by optimizing the alternating voltage in Pt/ZnO/TiN RRAM

(2022) Jongmin Park et al.   Results in Physics

Implementation of reservoir computing using volatile WO -based memristor

(2022) Dahye Kim et al.   APPLIED SURFACE SCIENCE

Noise Tailoring in Memristive Filaments

(2021) Botond Sánta et al.   ACS Applied Materials & Interfaces

Stochastic resonance in a metal-oxide memristive device

(2021) A.N. Mikhaylov et al.   CHAOS SOLITONS & FRACTALS

Noise-assisted persistence and recovery of memory state in a memristive spiking neuromorphic network

(2021) I.A. Surazhevsky et al.   CHAOS SOLITONS & FRACTALS

Influence of oxygen ion elementary diffusion jumps on the electron current through the conductive filament in yttria stabilized zirconia nanometer-sized memristor

(2021) Arkady V. Yakimov et al.   CHAOS SOLITONS & FRACTALS

Neurohybrid Memristive CMOS-Integrated Systems for Biosensors and Neuroprosthetics

(2020) Alexey Mikhaylov et al.   Frontiers in Neuroscience

Effects of noise sourcing on organic memristive devices

(2020) Silvia Battistoni et al.   CHAOS SOLITONS & FRACTALS

Space-charge limited conduction in epitaxial chromia films grown on elemental and oxide-based metallic substrates

(2019) C.-P. Kwan et al.   AIP Advances

Measurement of the activation energies of oxygen ion diffusion in yttria stabilized zirconia by flicker noise spectroscopy

(2019) Arkady V. Yakimov et al.   APPLIED PHYSICS LETTERS

Stimulated Ionic Telegraph Noise in Filamentary Memristive Devices

(2019) Stefano Brivio et al.   Scientific Reports

Highly uniform switching of HfO 2−x based RRAM achieved through Ar plasma treatment for low power and multilevel storage

(2018) Meng Qi et al.   APPLIED SURFACE SCIENCE

From Memory to Sensor: Ultralow Power and High Selectivity Hydrogen Sensor Based on ReRAM Technology

(2018) Zhiqiang Wei et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Scalable cross-point resistive switching memory and mechanism through an understanding of H2O2/glucose sensing using an IrOx/Al2O3/W structure

(2017) Somsubhra Chakrabarti et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Effects of W/Ir Top Electrode on Resistive Switching and Dopamine Sensing by Using Optimized TaO x -Based Memory Platform

(2017) Subhranu Samanta et al.   Advanced Materials Interfaces

Resistive Switching Mechanisms on TaOx and SrRuO3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy

(2016) Marco Moors et al.   ACS Nano

A review of emerging non-volatile memory (NVM) technologies and applications

(2016) An Chen   SOLID-STATE ELECTRONICS

Memory programming of TiO2−x films by Conductive Atomic Force Microscopy evidencing filamentary resistive switching

(2015) P. Bousoulas et al.   APPLIED SURFACE SCIENCE

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

(2015) Ee Lim et al.   Electronics

The Role of Ti Capping Layer in HfOx-Based RRAM Devices

(2014) Zheng Fang et al.   IEEE ELECTRON DEVICE LETTERS

Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

(2014) L. Zhao et al.   Nanoscale

On the beneficial role of noise in resistive switching

(2013) G. A. Patterson et al.   APPLIED PHYSICS LETTERS

Low-Frequency Electronic Noise in Single-Layer MoS2 Transistors

(2013) Vinod K. Sangwan et al.   NANO LETTERS

Low-Frequency Noise in Oxide-Based $(\hbox{TiN}/ \hbox{HfO}_{x}/\hbox{Pt})$ Resistive Random Access Memory Cells

(2012) Z. Fang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Very Low Reset Current for an RRAM Device Achieved in the Oxygen-Vacancy-Controlled Regime

(2011) N. Raghavan et al.   IEEE ELECTRON DEVICE LETTERS

Noise-Analysis-Based Model of Filamentary Switching ReRAM With $\hbox{ZrO}_{x}/\hbox{HfO}_{x}$ Stacks

(2011) Daeseok Lee et al.   IEEE ELECTRON DEVICE LETTERS

Analysis of the Low-Frequency Noise Reduction in Si(100) Metal–Oxide–Semiconductor Field-Effect Transistors

(2011) Philippe Gaubert et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Conduction and Low-Frequency Noise Analysis in $ \hbox{Al}/\alpha\hbox{-TiO}_{X}/\hbox{Al}$ Bipolar Switching Resistance Random Access Memory Devices

(2010) Jung-Kyu Lee et al.   IEEE ELECTRON DEVICE LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Comparative study of low frequency noise and hot-carrier reliability in SiGe PD SOI pMOSFETs

(2008) Sang-Sik Choi et al.   APPLIED SURFACE SCIENCE

What Do We Certainly Know About $\hbox{1}/f$ Noise in MOSTs?

(2008) Lode K. J. Vandamme et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES