Effect of SiO2 sublayer on the retention characteristics of nanometer-sized Si3N4 memristive devices investigated by low-frequency noise spectroscopy

The results of the experimental investigation of the relationship between the low-frequency noise spectrum of the electric current through conducting filaments in Si3N4 films with a thickness of 6 nm on n (++)-Si(001) conducting substrates and retention characteristics of these filaments are reported. Two structures are investigated: Si3N4/Si, thin (about 6 nm) Si3N4 film on the n(++)-Si substrate; Si3N4/SiO2/Si, a similar structure with a 2 nm SiO2 sublayer between the film and the substrate. A detailed comparison of the experimentally extracted parameters, such as average current through the filament, probability density function, and spectrum, is presented with a discussion of possible physical reasons for the difference between the testing structures and their effect on retention characteristics.

Automated summary

This study reports the experimental investigation on the relationship between the low-frequency noise spectrum of electric current through conducting filaments in 6 nm Si3N4 films on n(++)-Si(001) conducting substrates and the retention characteristics of these filaments. Two different structures were analyzed and compared, and the possible physical reasons for the differences between them and their effects on retention characteristics were discussed.