Comparative study of low frequency noise and hot-carrier reliability in SiGe PD SOI pMOSFETs

Published 2008 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Comparative study of low frequency noise and hot-carrier reliability in SiGe PD SOI pMOSFETs
Authors
Keywords
-
Journal
APPLIED SURFACE SCIENCE
Volume 254, Issue 19, Pages 6190-6193
Publisher
Elsevier BV
Online
2008-03-25
DOI
10.1016/j.apsusc.2008.02.188

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.