Article
Engineering, Electrical & Electronic
M. Sinha, S. Neogi, R. Ghosh
Summary: The operating temperature is an important factor in controlling the selectivity of a chemiresistive type sensor for gas/vapor detection. By regulating the temperature dependent adsorption/desorption process, the selectivity of the sensor can be switched between different target gases, making it suitable for practical applications. In this study, a high performance, low temperature, and versatile VOC sensor was developed using hydrothermally synthesized ZnO nanorod networks. The selectivity of the sensor prototype was successfully switched from methanol to formaldehyde by adjusting the operating temperature. The sensor exhibited high sensitivity, selectivity, repeatability, and a low response time, making it a reliable VOC sensor for practical applications.
SENSORS AND ACTUATORS A-PHYSICAL
(2023)
Article
Chemistry, Analytical
Marek Vidis, Michal Patrnciak, Martin Mosko, Andrej Plecenik, Leonid Satrapinskyy, Tomas Roch, Pavol Durina, Tomas Plecenik
Summary: This study examines the coexistence of hydrogen gas sensing and resistive switching in a single device, investigates the influence of the forming process on the sensor's response to hydrogen, and proposes an equivalent device model based on experimental data. The built-in memory operation, triggering the resistive switch by a change of the hydrogen gas concentration, is successfully demonstrated for various devices at different temperatures and humidity levels.
SENSORS AND ACTUATORS B-CHEMICAL
(2023)
Article
Multidisciplinary Sciences
Shaobo Cheng, Min-Han Lee, Xing Li, Lorenzo Fratino, Federico Tesler, Myung-Geun Han, Javier Del Valle, R. C. Dynes, Marcelo J. Rozenberg, Ivan K. Schuller, Yimei Zhu
Summary: Vanadium dioxide (VO2) is capable of metal-insulator transition and resistive switching, making it suitable for neuromorphic computing hardware. This study reveals the mechanisms of both volatile and nonvolatile switching in VO2, which can emulate neuronal and synaptic behaviors, respectively, providing a comprehensive understanding of resistive switching crucial for neuromorphic computing development.
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
(2021)
Article
Engineering, Electrical & Electronic
Meng-Hung Tsai, Chia-Jung Shih, Che-Wei Chang, Yu-Tseng Chu, You-Shen Wu, Cheng-Liang Huang
Summary: In this work, we propose that the band gap of amorphous Nb2O5 thin films can be narrowed, and this concept is validated by fabricating amorphous Nb2O5 based resistive random-access memory devices. The effects of Mn dopants and temperature on the conduction mechanism of the Nb2O5-based devices are investigated, and it is demonstrated that oxygen vacancies dominate the conduction mechanism of Mn-doped Nb2O5-based devices. X-ray photoelectron spectroscopy analysis reveals that the addition of Mn promotes the oxidation of Nb, offering significant benefits for improving the performance of RRAM memory.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Chemistry, Multidisciplinary
Daniil Nikitin, Kateryna Biliak, Pavel Pleskunov, Suren Ali-Ogly, Veronika Cervenkova, Niko Carstens, Blessing Adejube, Thomas Strunskus, Zulfiya Cernochova, Petr Stepanek, Lucia Bajtosova, Miroslav Cieslar, Mariia Protsak, Marco Tosca, Jonathan Lemke, Franz Faupel, Hynek Biederman, Alexander Vahl, Andrei Choukourov
Summary: Neuromorphic engineering attempts to overcome challenges in conventional computation techniques by taking inspiration from neuron assemblies. In this study, Ag/poly(ethylene glycol) (PEG) nanofluids are used to mimic the spatio-temporal reconfiguration of network connections. The unique behavior of Ag/PEG nanofluids shows promise for transitioning to 3D network topologies.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Harshada Patil, Honggyun Kim, Shania Rehman, Kalyani D. Kadam, Jamal Aziz, Muhammad Farooq Khan, Deok-kee Kim
Summary: The study demonstrated bipolar resistive switching in an Ag/ZnO/P3HT-PCBM/ITO device, showing good performance and stability, with potential for multilevel resistive switching.
Article
Engineering, Electrical & Electronic
Zhenhua Wu, Yinxiao Feng, Yan Liu, Huilie Shi, Shuai Zhang, Zekun Liu, Zhiyu Hu
Summary: A bipolar resistive switching behavior was observed in the Ag/Sb2Te3/Pt heterojunction, with numerical simulation clarifying the electrical conduction mechanism and proposing a synergy model of the conductive filament and Schottky emission. This work enriches the material system of resistive random access memory and promotes a profound understanding of the physical mechanism behind RS behavior for further application in synaptic bionics.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Physical
Jiangqiu Wang, Bai Sun, Guangdong Zhou, Shouhui Zhu, Chuan Yang, Chuan Ke, Yong Zhao, Hongyan Wang
Summary: In this study, a memristive device was fabricated using a WOx/BiFeOy heterojunction as a functional layer, which demonstrated enhanced bipolar nonvolatile resistive switching (RS) memory behavior compared to single-layer BiFeOy-based memristors. A reasonable physical model based on the space-charge-limited current (SCLC) mechanism and the Schottky emission was proposed to explain the RS memory behavior of the device. This work indicates that the bilayer WOx/BiFeOy heterojunction can effectively improve the performance of memristive devices.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Materials Science, Multidisciplinary
Yu-Chi Chang, Chih-Hsin Lin, Hao-Jung Liu, Jia-Cheng Jian
Summary: In this paper, carrageenan material extracted from red edible seaweed is used as a resistive memory device structure for the first time. The carrageenan substrate (CS) provides excellent optical transparency, low cost, abundant sources, skin-friendliness, and biodegradability. The ICAC device, made with the CS, shows promising resistive switching behavior, good uniformity, and bending performance.
ORGANIC ELECTRONICS
(2023)
Article
Chemistry, Physical
Himadri Nandan Mohanty, Anjan Kumar Jena, Urvashi Yadav, Ajit Kumar Sahoo, Syam P. Prasad, J. Mohanty
Summary: The BYFMO film exhibits semiconductor behavior and soft ferromagnetic properties, with high tunable piezoelectric and ferroelectric features. The AG/BYFMO/FTO RRAM shows excellent bipolar resistive switching performance, with a stable memory window and good endurance and retention properties.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Multidisciplinary
Jaeyoung Jeon, Kitae Eom, Minkyung Lee, Sungkyu Kim, Hyungwoo Lee
Summary: Collective control of oxygen vacancies in oxide heterostructures enables reliable and gradual resistive switching, offering a new approach for developing next-generation non-volatile memory devices.
Article
Nanoscience & Nanotechnology
Huiren Peng, Hongjun Liu, Xuhang Ma, Xing Cheng
Summary: By inserting a HfAlO (x) layer between the InGaZnO layer and the bottom Pt electrode in amorphous IGZO memory device, the resistive switching (RS) performance is significantly improved. The device with the HfAlO (x) layer exhibits lower switching voltages, faster switching speeds, lower switching energy, lower power consumption, improved uniformity of switching voltage and resistance state. Additionally, it shows long retention time, high on/off ratio, and endurance over 10(3) cycles at atmospheric environment.
Article
Chemistry, Physical
Samuel Chen Wai Chow, Putu Andhita Dananjaya, Jia Min Ang, Desmond Jia Jun Loy, Jia Rui Thong, Siew Wei Hoo, Eng Huat Toh, Wen Siang Lew
Summary: The resistive switching characteristics of MgO/Al2O3-based ReRAM devices are reported in this work. The introduction of an Al2O3 insertion layer changes the dominant conduction mechanism from space-charge-limited conduction to Schottky emission. MgO/Al2O3 bilayer ReRAM devices show lower power operation (50.6% reduction) and better switching uniformity compared to single-layer devices, depending on the stack configuration. X-ray photoelectron spectroscopy (XPS) depth profile analysis reveals that the switching dynamics are directly correlated with the oxygen vacancy concentrations. These findings highlight the importance of interfacial layer engineering in improving the resistive switching properties of MgO-based memory devices for low-power applications.
APPLIED SURFACE SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Tran Thi Be Lan, Yu-Teng Li, An-Cheng Aidan Sun, Hsi-Chuan Lu, Sea-Fue Wang
Summary: This study aimed to characterize the resistive memory switching mechanism of cerium dioxide (CeO2) thin insulating films with different dopants, revealing that metallic Gd and Zr were more effective than Ca in CeO2 films. XPS analysis indicated that oxygen played a crucial role in generating conductive filaments in doped films.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Multidisciplinary Sciences
Kyunghwan Min, Dongmyung Jung, Yongwoo Kwon
Summary: This study presents simulations of conductive filament formation in resistive random-access memory using a finite element solver, considering the switching material as a two-phase material. The research focuses on studying the forming-voltage uniformity and finding that a protruding electrode can significantly improve the switching uniformity.
SCIENTIFIC REPORTS
(2021)
Article
Chemistry, Multidisciplinary
Rupali Rakshit, Azusa N. Hattori, Yasuhisa Naitoh, Hisashi Shima, Hiroyuki Akinaga, Hidekazu Tanaka
Article
Instruments & Instrumentation
Hiroyuki Akinaga
SENSORS AND MATERIALS
(2019)
Article
Physics, Applied
Yuji Okuda, Junpei Kawakita, Toshiyuki Taniuchi, Hisashi Shima, Atsushi Shimizu, Yasuhisa Naitoh, Kentaro Kinoshita, Hiro Akinaga, Shik Shin
JAPANESE JOURNAL OF APPLIED PHYSICS
(2020)
Article
Physics, Applied
Chisato Arima, Yasuhisa Naitoh, Hisashi Shima, Hiroyuki Akinaga, Tsuyoshi Hasegawa
JAPANESE JOURNAL OF APPLIED PHYSICS
(2020)
Article
Physics, Applied
Keita Ojima, Tsuyoshi Hasegawa, Yasuhisa Naitoh, Hisashi Shima, Hiroyuki Akinaga
JAPANESE JOURNAL OF APPLIED PHYSICS
(2020)
Article
Chemistry, Physical
Yasuhisa Naitoh, Yosuke Tani, Emiko Koyama, Tohru Nakamura, Touru Sumiya, Takuji Ogawa, Guento Misawa, Hisashi Shima, Kota Sugawara, Hiroshi Suga, Hiroyuki Akinaga
JOURNAL OF PHYSICAL CHEMISTRY C
(2020)
Article
Crystallography
Azusa N. Hattori, Ai I. Osaka, Ken Hattori, Yasuhisa Naitoh, Hisashi Shima, Hiroyuki Akinaga, Hidekazu Tanaka
Review
Physics, Applied
Hiroyuki Akinaga
JAPANESE JOURNAL OF APPLIED PHYSICS
(2020)
Article
Physics, Applied
Hiroshi Sato, Hisashi Shima, Yusei Honma, Yasuhisa Naitoh, Hiroyuki Akinaga, Toshiki Nokami, Toshiyuki Itoh, Dan Sato, Kentaro Kinoshita
Summary: Researchers have successfully developed a new type of ionic-liquid conductive-bridge memory (IL-CBRAM), which shows improved data retention time and performance by inserting a Ta adhesion layer in the memory cell. The data-retention characteristics were successfully controlled by designing the cell considering the SEP arrangement of metals.
APPLIED PHYSICS EXPRESS
(2021)
Article
Nanoscience & Nanotechnology
Kota Sugawara, Hisashi Shima, Makoto Takahashi, Yasuhisa Naitoh, Hiroshi Suga, Hiroyuki Akinaga
Summary: Research and development of resistive switching memories, such as ReRAM and memristors, are actively promoted for new computing techniques. The study used low-frequency-noise spectroscopy to investigate traps in conduction paths of a TaOx-based ReRAM device, revealing multiple trap levels at different temperatures, showcasing the device's advantage in analog resistive switching applications.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Multidisciplinary Sciences
Sang-Gyu Koh, Hisashi Shima, Yasuhisa Naitoh, Hiroyuki Akinaga, Kentaro Kinoshita
Summary: A physical reservoir device with tunable transient dynamics is proposed for processing time-series data with various timescales. By controlling the viscosity of the ionic liquid, the data transformation can be optimized to achieve higher accuracy.
SCIENTIFIC REPORTS
(2022)
Article
Computer Science, Information Systems
Hiroshi Sato, Hisashi Shima, Yusei Honma, Yasuhisa Naitoh, Hiroyuki Akinaga, Toshiki Nokami, Toshiyuki Itoh, Kentaro Kinoshita
Summary: Ionic liquids (ILs), consisting of cations and anions, have attractive properties like wide potential windows and when combined with electronic devices can provide new options for a sustainable internet of things society. This study developed an IL-supplied conducting-bridge random access memory (IL-CBRAM) with Cu filament formation/rupture as the operating mechanism, successfully addressing the challenge of introducing liquids into solid-state processes.
Article
Nanoscience & Nanotechnology
Hiroshi Suga, Hiroya Suzuki, Kazuki Otsu, Takuya Abe, Yukiya Umeta, Kazuhito Tsukagoshi, Touru Sumiya, Hisashi Shima, Hiroyuki Akinaga, Yasuhisa Naitoh
ACS APPLIED NANO MATERIALS
(2020)
Article
Engineering, Electrical & Electronic
Hisashi Shima, Makoto Takahashi, Yasuhisa Naitoh, Hiroyuki Akinaga
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2018)
