Implementation of convolutional neural network and 8-bit reservoir computing in CMOS compatible VRRAM

Improved Al2O3 RRAM performance based on SiO2/MoS2 quantum dots hybrid structure

(2022) Yiru Niu et al.   APPLIED PHYSICS LETTERS

Effect of Program Error in Memristive Neural Network With Weight Quantization

(2022) Tae-Hyeon Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Dynamic memristor-based reservoir computing for high-efficiency temporal signal processing

(2021) Yanan Zhong et al.   Nature Communications

Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device

(2021) Sobia Ali Khan et al.   Nanomaterials

3-bit multilevel operation with accurate programming scheme in TiO x /Al2O3 memristor crossbar array for quantized neuromorphic system

(2021) Tae-Hyeon Kim et al.   NANOTECHNOLOGY

Tunable Synaptic Characteristics of a Ti/TiO2/Si Memory Device for Reservoir Computing

(2021) Jinwoong Yang et al.   ACS Applied Materials & Interfaces

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

(2021) Zhihua Yong et al.   APPLIED SURFACE SCIENCE

Implementation of a reservoir computing system using the short-term effects of Pt/HfO2/TaOx/TiN memristors with self-rectification

(2021) Hojeong Ryu et al.   CHAOS SOLITONS & FRACTALS

Accurate Program/Verify Schemes of Resistive Switching Memory (RRAM) for In-Memory Neural Network Circuits

(2021) Valerio Milo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

In materia reservoir computing with a fully memristive architecture based on self-organizing nanowire networks

(2021) Gianluca Milano et al.   NATURE MATERIALS

Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing

(2020) Pei-Yu Wu et al.   IEEE ELECTRON DEVICE LETTERS

Analog Switching and Artificial Synaptic Behavior of Ag/SiOx:Ag/TiOx/p++-Si Memristor Device

(2020) Nasir Ilyas et al.   Nanoscale Research Letters

Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing

(2020) Lei Wu et al.   Nanomaterials

Lead-free monocrystalline perovskite resistive switching device for temporal information processing

(2020) Jing-Yu Mao et al.   Nano Energy

A Robust and Low‐Power Bismuth Doped Tin Oxide Memristor Derived from Coaxial Conductive Filaments

(2020) Yanxin Liu et al.   Small

Vertical organic synapse expandable to 3D crossbar array

(2020) Yongsuk Choi et al.   Nature Communications

Short-Term Memory Dynamics of TiN/Ti/TiO2/SiOx/Si Resistive Random Access Memory

(2020) Hyojong Cho et al.   Nanomaterials

An On-Chip Learning Method for Neuromorphic Systems Based on Non-Ideal Synapse Devices

(2020) Jae-Eun Lee et al.   Electronics

A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments

(2020) Min-Ci Wu et al.   Nano Energy

Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM

(2019) Jihang Lee et al.   ACS Applied Materials & Interfaces

Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays

(2019) Min‐Ci Wu et al.   Advanced Science

Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer

(2018) Yichen Fang et al.   IEEE ELECTRON DEVICE LETTERS

Adaptive Weight Quantization Method for Nonlinear Synaptic Devices

(2018) Dongseok Kwon et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Thermodynamic assessment of the group IV, V and VI oxides for the design of oxidation resistant multi-principal component materials

(2018) Lavina Backman et al.   JOURNAL OF THE EUROPEAN CERAMIC SOCIETY

Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)

(2017) Ilia Valov   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Reservoir computing using dynamic memristors for temporal information processing

(2017) Chao Du et al.   Nature Communications

Bulk Oxygen–Ion Storage in Indium–Tin–Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory

(2016) Po-Hsun Chen et al.   IEEE ELECTRON DEVICE LETTERS

Interface engineered HfO2-based 3D vertical ReRAM

(2016) Boris Hudec et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

(2015) Hangbing Lv et al.   Scientific Reports

Ultra-Low-Energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation Systems

(2014) Bin Gao et al.   ACS Nano

Novel Defects-Trapping ${\rm TaO}_{\rm X}/{\rm HfO}_{\rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

(2014) Yu-Sheng Chen et al.   IEEE ELECTRON DEVICE LETTERS

A Review on Conduction Mechanisms in Dielectric Films

(2014) Fu-Chien Chiu   Advances in Materials Science and Engineering

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Oxygen vacancy estimation of high k metal gate using thermal dynamic model

(2010) H. L. Chang et al.   APPLIED PHYSICS LETTERS

Current conduction mechanisms in Pr2O3/oxynitride laminated gate dielectrics

(2009) Fu-Chien Chiu et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today