A Robust and Low-Power Bismuth Doped Tin Oxide Memristor Derived from Coaxial Conductive Filaments

Memristor, processing data storage and logic operation all-in-one, is an advanced configuration for next generation computer. In this work, a bismuth doped tin oxide (Bi:SnO2) memristor with ITO/Bi:SnO2/TiN structure has been fabricated. Observing from transmission electron microscope (TEM) for the Bi:SnO(2)device, it is found that the bismuth atoms surround the surface of SnO(2)crystals to form the coaxial Bi conductive filament. The self-compliance current, switching voltage and operating current of Bi:SnO(2)memristor are remarkably smaller than that of ITO/SnO2/TiN device. With the content of 4.8% Bi doping, the SET operating power of doped device is 16 mu W for ITO/Bi:SnO2/TiN memory cell of 0.4 x 0.4 mu m(2), which is cut down by two orders of magnitude. Hence, the findings in this study suggest that Bi:SnO(2)memristors hold significant potential for application in low power memory and broadening the understanding of existing resistive switching (RS) mechanism.