Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer

Published 2018 View Full Article

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Journal

IEEE ELECTRON DEVICE LETTERS

Volume 39, Issue 6, Pages 819-822

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2018-05-01

DOI

10.1109/led.2018.2831698

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