A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments

Resistive random access memory (RRAM) is a potential nonvolatile memory to apply in large-scale integration systems due to its high switching speed and cost-effective priority. Transition metal oxides have been utilized as the switching layer owing to the stable structure and variable oxidation state of transition metals. In this work, a functional RRAM device (Pt/AlOx/ZnO/Ti) was fabricated, and the resistive switching process could be well controlled by the voltage supply. The device exhibited low power consumption (0.586 nW for SET, 0.596 nW for RESET, and forming free), self-current compliance in LRS (10(6) Omega with approximately 10(-5) A), and high cycling endurance (up to 3 x 10(3) times). The switching mechanism has been discussed in detail and comprehensively analyzed by scanning transmission electron microscope (STEM) and electrons energy loss spectrum (EELS). The results provide strong evidence of the continuous oxygen vacancy filaments in ZnO and discontinuous oxygen deficient regions in AlOx. The switching mechanism for complex structure RRAM is verified and a potential candidate selection with excellent electrical properties is demonstrated.

Automated summary

The resistive random access memory (RRAM) device demonstrated in this work showed low power consumption, self-current compliance, and high cycling endurance, with the switching mechanism verified through oxygen vacancy filaments and oxygen deficient regions, providing evidence for potential candidate selection in complex structure RRAM.