Ultra-high ON/OFF ratio and multi-storage on NiO resistive switching device

Asymmetric Current Behavior on Unipolar Resistive Switching in Pt/HfO2/Pt Resistor With Symmetric Electrodes

(2016) Jiehun Kang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

ZnO/Al:ZnO Transparent Resistive Switching Devices Grown by Atomic Layer Deposition for Memristor Applications

(2016) Rajeh Mundle et al.   LANGMUIR

Compliance current induced non-reversible transition from unipolar to bipolar resistive switching in a Cu/TaOx/Pt structure

(2015) F. Kurnia et al.   APPLIED PHYSICS LETTERS

Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory device

(2015) Lifeng Liu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

The improved resistive switching of HfO2:Cu film with multilevel storage

(2015) Tingting Guo et al.   JOURNAL OF MATERIALS SCIENCE

Initial defect configuration in NiO film for reliable unipolar resistance switching of Pt/NiO/Pt structure

(2015) S-H Phark et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Effects of stress on resistive switching property of the NiO RRAM device

(2015) Guokun Ma et al.   MICROELECTRONIC ENGINEERING

Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure

(2015) Yingtao Li et al.   NANOTECHNOLOGY

Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5–Ta system

(2015) Shuang Gao et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Tailoring resistive switching in Pt/SrTiO3 junctions by stoichiometry control

(2015) Evgeny Mikheev et al.   Scientific Reports

Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions

(2014) Evgeny Mikheev et al.   Nature Communications

Coexistence of the bipolar and unipolar resistive switching behaviors in vanadium doped ZnO films

(2013) Dinglin Xu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Effect of Ni3+ concentration on the resistive switching behaviors of NiO memory devices

(2013) Guokun Ma et al.   MICROELECTRONIC ENGINEERING

Oxide Heterostructure Resistive Memory

(2013) Yuchao Yang et al.   NANO LETTERS

Response to “Comment on Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM”

(2012) Qi Liu et al.   ADVANCED MATERIALS

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Mechanism for resistive switching in an oxide-based electrochemical metallization memory

(2012) Shanshan Peng et al.   APPLIED PHYSICS LETTERS

Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure

(2012) C. Chen et al.   APPLIED PHYSICS LETTERS

Interface mediated resistive switching in epitaxial NiO nanostructures

(2012) Jivika Sullaphen et al.   APPLIED PHYSICS LETTERS

Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices

(2012) Wei Hu et al.   APPLIED PHYSICS LETTERS

Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament

(2012) S. Z. Rahaman et al.   JOURNAL OF APPLIED PHYSICS

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiO x /TiO y frameworks due to oxygen vacancy drifts

(2011) Yoon Cheol Bae et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Piezotronic Nanowire-Based Resistive Switches As Programmable Electromechanical Memories

(2011) Wenzhuo Wu et al.   NANO LETTERS

A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

NiO Resistive Random Access Memory Nanocapacitor Array on Graphene

(2010) Jong Yeog Son et al.   ACS Nano

Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory

(2010) Jaehoon Song et al.   Applied Physics Express

Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices

(2010) Myoung-Jae Lee et al.   IEEE ELECTRON DEVICE LETTERS

Multilevel resistive switching in Ti/CuxO/Pt memory devices

(2010) Sheng-Yu Wang et al.   JOURNAL OF APPLIED PHYSICS

Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire

(2010) Kazuki Nagashima et al.   NANO LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Multilevel resistive switching with ionic and metallic filaments

(2009) Ming Liu et al.   APPLIED PHYSICS LETTERS

Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices

(2009) Carlo Cagli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of metal electrodes on the resistive memory switching property of NiO thin films

(2008) C. B. Lee et al.   APPLIED PHYSICS LETTERS

Direct observation of oxygen movement during resistance switching in NiO/Pt film

(2008) Chikako Yoshida et al.   APPLIED PHYSICS LETTERS

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology