Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices

Published 2010 View Full Article

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Title
Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 7, Pages 725-727
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-06-03
DOI
10.1109/led.2010.2048886
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