The improved resistive switching of HfO2:Cu film with multilevel storage
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Title
The improved resistive switching of HfO2:Cu film with multilevel storage
Authors
Keywords
HfO2, Resistive Switching, High Resistance State, Resistive Random Access Memory, Switching Voltage
Journal
JOURNAL OF MATERIALS SCIENCE
Volume 50, Issue 21, Pages 7043-7047
Publisher
Springer Nature
Online
2015-07-20
DOI
10.1007/s10853-015-9257-9
References
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- (2008) J. Joshua Yang et al. Nature Nanotechnology
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