Effects of stress on resistive switching property of the NiO RRAM device

Published 2015 View Full Article

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Title
Effects of stress on resistive switching property of the NiO RRAM device
Authors
Keywords
NiO, Resistive switching, Stress
Journal
MICROELECTRONIC ENGINEERING
Volume 139, Issue -, Pages 43-47
Publisher
Elsevier BV
Online
2015-04-21
DOI
10.1016/j.mee.2015.04.095

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