Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory

Published 2010 View Full Article

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Title
Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory
Authors
Keywords
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Journal
Applied Physics Express
Volume 3, Issue 9, Pages 091101
Publisher
IOP Publishing
Online
2010-08-20
DOI
10.1143/apex.3.091101

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