Effect of Ni3+ concentration on the resistive switching behaviors of NiO memory devices

Published 2013 View Full Article

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Title
Effect of Ni3+ concentration on the resistive switching behaviors of NiO memory devices
Authors
Keywords
-
Journal
MICROELECTRONIC ENGINEERING
Volume 108, Issue -, Pages 8-10
Publisher
Elsevier BV
Online
2013-03-18
DOI
10.1016/j.mee.2013.03.043

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