Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

(2011) L. Goux et al.   APPLIED PHYSICS LETTERS

Stacked GeO/SrTiOx Resistive Memory with Ultralow Resistance Currents

(2011) C. H. Cheng et al.   APPLIED PHYSICS LETTERS

Fabrication and characterization of extended arrays of Ag2S/Ag nanodot resistive switches

(2011) Daoai Wang et al.   APPLIED PHYSICS LETTERS

A HfO2 Thin Film Resistive Switch Based on Conducting Atomic Force Microscopy

(2011) J. Y. Son et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices

(2011) D. Ielmini et al.   JOURNAL OF APPLIED PHYSICS

Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-DepositedRuOxMetal Nanocrystal Capacitors

(2011) S. Maikap et al.   Journal of Nanomaterials

Tunable Synthesis of Cuprous and Cupric Oxide Nanotubes from Electrodeposited Copper Nanowires

(2011) Young-In Lee et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

NiO Resistive Random Access Memory Nanocapacitor Array on Graphene

(2010) Jong Yeog Son et al.   ACS Nano

Formation and Instability of Silver Nanofilament in Ag-Based Programmable Metallization Cells

(2010) Chang-Po Hsiung et al.   ACS Nano

Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte

(2010) S. Z. Rahaman et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM

(2010) W.C. Chien et al.   IEEE ELECTRON DEVICE LETTERS

Electroforming and Resistance Switching Characteristics of Silver-Doped MSQ With Inert Electrodes

(2010) R Rosezin et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Resistive switching mechanism in delafossite-transition metal oxide (CuInO2–CuO) bilayer structure

(2010) Deepak Varandani et al.   JOURNAL OF APPLIED PHYSICS

Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films

(2010) Seunghyup Lee et al.   JOURNAL OF APPLIED PHYSICS

Nonvolatile and unipolar resistive switching characteristics of pulsed laser ablated NiO films

(2010) D. Panda et al.   JOURNAL OF APPLIED PHYSICS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

The Effect of Oxygen on the Work Function of Tungsten Gate Electrodes in MOS Devices

(2009) M.E. Grubbs et al.   IEEE ELECTRON DEVICE LETTERS

Improvement of CBRAM Resistance Window by Scaling Down Electrode Size in Pure-GeTe Film

(2009) Sang-Jun Choi et al.   IEEE ELECTRON DEVICE LETTERS

Excellent Switching Uniformity of Cu-Doped $\hbox{MoO}_{x}/\hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications

(2009) Jaesik Yoon et al.   IEEE ELECTRON DEVICE LETTERS

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

(2009) H.Y. Lee et al.   IEEE ELECTRON DEVICE LETTERS

Bipolar resistive switching performance of the nonvolatile memory cells based on (AgI)0.2(Ag2MoO4)0.8 solid electrolyte films

(2009) X. B. Yan et al.   JOURNAL OF APPLIED PHYSICS

Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization

(2009) Y. C. Yang et al.   JOURNAL OF APPLIED PHYSICS

Low current resistive switching in Cu–SiO2 cells

(2008) C. Schindler et al.   APPLIED PHYSICS LETTERS

Epitaxial growth of high mobility Cu2O thin films and application to p-channel thin film transistor

(2008) Kosuke Matsuzaki et al.   APPLIED PHYSICS LETTERS

Erasing characteristics of Cu[sub 2]O metal-insulator-metal resistive switching memory

(2008) A. Chen et al.   APPLIED PHYSICS LETTERS

Quantum size effect of electron density in ultra-thin metal films and its influence on the interlayer relaxation

(2008) Fei Ma et al.   APPLIED SURFACE SCIENCE

Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch

(2008) Naoki Banno et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhancement of Oxidation Resistance and Electrical Properties of Indium-Doped Copper Thin Films

(2008) C.S. Hsu et al.   JOURNAL OF ELECTRONIC MATERIALS

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology

Controlled local filament growth and dissolution in Ag–Ge–Se

(2008) Christina Schindler et al.   Physica Status Solidi-Rapid Research Letters