Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability

Memtransistor Devices Based on MoS 2 Multilayers with Volatile Switching due to Ag Cation Migration

(2022) Matteo Farronato et al.   Advanced Electronic Materials

Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing

(2022) Baoshan Tang et al.   Nature Communications

Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing

(2021) Sifan Li et al.   npj 2D Materials and Applications

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

(2021) Xiaodong Yan et al.   ADVANCED MATERIALS

Engineering of defects in resistive random access memory devices

(2020) Writam Banerjee et al.   JOURNAL OF APPLIED PHYSICS

A Monolayer Leaky Integrate‐and‐Fire Neuron for 2D Memristive Neuromorphic Networks

(2020) Song Hao et al.   Advanced Electronic Materials

Memory devices and applications for in-memory computing

(2020) Abu Sebastian et al.   Nature Nanotechnology

Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions

(2020) Chen Pan et al.   Nature Electronics

Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application

(2019) Lin Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Electronic and Magnetic Properties of Defected Monolayer WSe2 with Vacancies

(2019) Danxi Yang et al.   Nanoscale Research Letters

Understanding memristive switching via in situ characterization and device modeling

(2019) Wen Sun et al.   Nature Communications

Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD

(2019) Jiazhen Sheng et al.   ACS Applied Materials & Interfaces

All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

(2019) Maheswari Sivan et al.   Nature Communications

MoS2 Memtransistors Fabricated by Localized Helium Ion Beam Irradiation

(2019) Jakub Jadwiszczak et al.   ACS Nano

Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

(2018) Vinod K. Sangwan et al.   NATURE

Three-terminal memtransistors based on two-dimensional layered gallium selenide nanosheets for potential low-power electronics applications

(2018) Yang Yang et al.   Nano Energy

Energy Dissipation in Monolayer MoS2 Electronics

(2017) Eilam Yalon et al.   NANO LETTERS

Oxygen vacancies effects in a-IGZO: Formation mechanisms, hysteresis, and negative bias stress effects

(2017) Albert de Jamblinne de Meux et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Effect of carrier screening on ZnO-based resistive switching memory devices

(2016) Yihui Sun et al.   Nano Research

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

(2016) Daniele Ielmini   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks

(2015) Daniele Garbin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Graphene Dynamic Synapse with Modulatable Plasticity

(2015) He Tian et al.   NANO LETTERS

Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

(2015) Vinod K. Sangwan et al.   Nature Nanotechnology

Systematic study of structural, electronic, and optical properties of atomic-scale defects in the two-dimensional transition metal dichalcogenidesMX2(M = Mo, W;X = S, Se, Te)

(2015) Soumyajyoti Haldar et al.   PHYSICAL REVIEW B

Electronic and thermoelectric properties of few-layer transition metal dichalcogenides

(2014) Darshana Wickramaratne et al.   JOURNAL OF CHEMICAL PHYSICS

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices

(2011) D. Ielmini et al.   JOURNAL OF APPLIED PHYSICS

Energy Dissipation in Graphene Field-Effect Transistors

(2009) Marcus Freitag et al.   NANO LETTERS